ScienceDirect Publication: Microelectronic Engineering ScienceDirect RSS
- Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs
on May 21, 2026 at 2:54 pmPublication date: 1 September 2026Source: Microelectronic Engineering, Volume 305Author(s): S. Milazzo, G. Greco, G. Giorgino, C. Miccoli, S. Mirabella, F. Iucolano, F. Roccaforte
- Readout scheme in analog computing-in-memory: Review of design principles and recent progresson May 21, 2026 at 2:54 pm
Publication date: 1 September 2026Source: Microelectronic Engineering, Volume 305Author(s): Shizeng Zhang, Pingyang Huang, Haitao You, Xinyu Wu, Wei Chen, Li Zhang, Qiang Cui
- Multi-threshold reservoir computing system for high-efficiency temporal signal processingon May 21, 2026 at 2:54 pm
Publication date: 1 September 2026Source: Microelectronic Engineering, Volume 305Author(s): Yi-Qing Luo, Zheng-Wei Xu, Jian-Long Xu, Xu Gao, Ya-Nan Zhong, Sui-Dong Wang
- PEALD-AlON passivated GaN-on-Si Millimeter-wave MIS-HEMTs with low noise and high linearityon May 21, 2026 at 2:54 pm
Publication date: 1 September 2026Source: Microelectronic Engineering, Volume 305Author(s): Jing Yuan, Binhao Guo, Yixu Yao, Chenrui Zhang, Ying Luo, Lizhao Cen, Ke Wei, Yankui Li, Sen Huang, Xiaojuan Chen
- 2T DRAM characteristics applying a temperature-dependent a-IGZO TFT modelon May 21, 2026 at 2:54 pm
Publication date: 1 September 2026Source: Microelectronic Engineering, Volume 305Author(s): Sunghyun Woo, Seongwoo Kim, Myounggon Kang